Silicon Ingot and Wafer N or P Tpye; Orien.＜100＞、＜111＞、＜110＞ Res.0.001-100ohm; 30-5000ohm; Intrinsic FZ 300-10000ohm Ingot Length: 150mm-350mm; Dia.: 2inch～8inch; Wafer Dia.: 2inch～12inch;Thick.：SEMI Standard or as per customers’ Spec. Dislocation/Slip/Crack/Chip/Pin Hole/Broken：Free

Silicon carbide (SiC) was discovered in 1893 as an industrial abrasive for grinding wheels and automotive brakes. About midway through the 20th century, SiC wafer uses grew to include in LED technology. EST offers prime and dummy SiC wafers in a variety of diameters ranging from 2” to 8” (200mm).

Free standing GaN (Gallium Nitride) substrate wafer is mainly used for UHB-LED and LD application. The well-known effect of using free-standing GaN substrates can be improved material quality, reducing parasitic resistance effects for creating nitride semiconductor devices.

The basic principle of SAW devices is the generation of elastic surface waves from electrical signals and their reconversion. The substrate material is a piezoelectric crystal such quartz (SiO2), lithium tantalate (LiTaO3) or lithium niobate (LiNbO3).

EST provides 2", 4" and 8 " C-plane, R-plane sapphire wafers. SSP or DSP. Standard thickness at 1200um, 650um and 430um, thin wafers are available, and other specific specifications can provide upon your request.