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Silicon Carbide (SiC), one of the compound semiconductor materials, has unique material properties. For example, it has high electrical breakdown strength (ten times that of Silicon) and thermal conductivity (three times that of Silicon). These properties are attracting more attention of researchers and engineers. One of the most promising applications of SiC is power devices used in electronics. While Silicon-based power devices currently dominate the market, these devices have limits of their breakdown voltage. Potential growth of the SiC power devices is expected to be huge in markets such as automotive, trains and aerospace in which the devices need to operate in high-voltage and high-temperature.
Wafers, Epitaxy, and Chips: US currently one of the top 3 countries manufacturing these upstream components Particularly strong in wafer fabrication: good quality, yields For devices: Trend is towards large, multi-national incumbent power electronics players in Power Electronics Industry is moving towards vertical integration globally (acquisitions) （Sources: CEMAC ; SiC Power Electronics in Medium Voltage Motor Drives Trade and Manufacturing Analysis）
After 20 years of development since the research and development of 2-inch SiC substrates in 1992, Cree Wolfspeed has finally successfully developed 8-inch SiC substrates.（Source：Power America； SiC power device commercialization: status and barriers to overcome；Jan. 21, 2022 ）
